SiHF6N40D
www.vishay.com
PRODUCT SUMMARY
D Series Power MOSFET
FEATURES
? Optimal Design
Vishay Siliconix
V DS (V) at T J max.
R DS(on) max. at 25 °C ( ? )
Q g max. (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 10 V
450
18
3
4
Single
1.0
- Low Area Specific On-Resistance
- Low Input Capacitance (C iss )
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
? Optimal Efficiency and Operation
- Low Cost
TO-220 FULLPAK
G D S
G
D
S
N-Channel MOSFET
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): R on x Q g
- Fast Switching
? Compliant to RoHS Directive 2011/65/EU
Note
* Pb containing terminations are not RoHS compliant, exemptions
may apply
APPLICATIONS
? Consumer Electronics
- Displays (LCD or Plasma TV)
? Server and Telecom Power Supplies
- SMPS
? Industrial
- Welding
- Induction Heating
- Motor Drives
? Battery Chargers
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220 FULLPAK
SiHF6N40D-E3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
SYMBOL
V DS
V GS
LIMIT
400
± 30
30
UNIT
V
Continuous Drain Current (T J = 150 °C) e
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
6
4
A
Pulsed Drain Current a
I DM
13
Linear Derating Factor
0.24
W/°C
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
E AS
P D
T J , T stg
104
30
- 55 to + 150
mJ
W
°C
Drain-Source Voltage Slope
Reverse Diode dV/dt d
Soldering Recommendations (Peak Temperature)
T J = 125 °C
for 10 s
dV/dt
24
0.48
300 c
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V DD = 50 V, starting T J = 25 °C, L = 2.3 mH, R g = 25 ? , I AS = 9.5 A.
c. 1.6 mm from case.
d. I SD ? I D , starting T J = 25 °C.
e. Limited by maximum junction temperature.
S12-0687-Rev. A, 02-Apr-12
1
Document Number: 91501
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SIHG20N50C-E3 MOSFET N-CH 500V 20A TO247
SIHG24N65E-E3 MOSFET N-CH 650V 24A TO247AC
SIHP12N60E-E3 MOSFET N-CH 600V 12A TO220AB
SIHP30N60E-E3 MOSFET N-CH 600V 29A TO220AB
SIHP5N50D-E3 MOSFET N-CH 500V 5.3A TO220AB
SIHP6N40D-E3 MOSFET N-CH 400V 6A TO-220AB
SIHP7N60E-GE3 MOSFET N CH 600V 7A TO-220AB
SIHU3N50D-E3 MOSFET N-CH 500V 3A TO251 IPAK
相关代理商/技术参数
SiHF6N65E-GE3 功能描述:MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS RoHS:否 制造商:Vishay Semiconductors 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压: 漏极连续电流:7 A 电阻汲极/源极 RDS(导通):0.6 Ohms 配置:Single 最大工作温度:+ 150 C 安装风格: 封装 / 箱体: 封装:Bulk
SIHF710 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET
SIHF710-E3 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET
SIHF720 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET
SIHF720-E3 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET
SIHF720S 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET
SIHF730 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET
SIHF730A 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET